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STD/SDT116
Thyristor-Diode Modules, Diode-Thyristor Modules
Dimensions in mm (1mm=0.0394") VRSM VDSM V STD/SDT116GK08 900 STD/SDT116GK12 1300 STD/SDT116GK14 1500 STD/SDT116GK16 1700 STD/SDT116GK18 1900 Type VRRM VDRM V 800 1200 1400 1600 1800
Symbol ITRMS, IFRMS TVJ=TVJM ITAVM, IFAVM TC=85oC; 180o sine TVJ=45oC VR=0 ITSM, IFSM TVJ=TVJM VR=0
2
Test Conditions
Maximum Ratings 180 116
Unit A
t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine t=10ms (50Hz), sine t=8.3ms (60Hz), sine t=10ms(50Hz), sine t=8.3ms(60Hz), sine repetitive, IT=250A
2250 2400 2000 2150 25300 23900 20000 19100 150
A
i dt
TVJ=45oC VR=0 TVJ=TVJM VR=0
A2s
TVJ=TVJM f=50Hz, tp=200us (di/dt)cr VD=2/3VDRM IG=0.45A diG/dt=0.45A/us (dv/dt)cr PGM PGAV VRGM TVJ TVJM Tstg VISOL Md Weight 50/60Hz, RMS _ IISOL<1mA
A/us non repetitive, IT=ITAVM 500 1000 10 5 0.5 10 -40...+125 125 -40...+125 t=1min t=1s 3000 3600 2.5-4.0/22-35 2.5-4.0/22-35 90 V/us W W V
o
TVJ=TVJM; VDR=2/3VDRM RGK= ; method 1 (linear voltage rise) TVJ=TVJM IT=ITAVM tp=30us tp=300us
C
V~ Nm/lb.in. g
Mounting torque (M5) Terminal connection torque (M5) Typical including screws
STD/SDT116
Thyristor-Diode Modules, Diode-Thyristor Modules
Symbol Test Conditions Characteristic Values 5 1.5 0.8 2.4 VD=6V; VD=6V; TVJ=TVJM;
o
Unit mA V V m V mA V mA mA mA us us uC A K/W K/W mm mm m/s2
IRRM, IDRM TVJ=TVJM; VR=VRRM; VD=VDRM VT, VF VTO rT VGT IGT VGD IGD IL IH tgd tq QS IRM RthJC RthJK dS dA a per thyristor/diode; DC current per module per thyristor/diode; DC current per module Creeping distance on surface Strike distance through air Maximum allowable acceleration TVJ=25 C; tp=10us; VD=6V IG=0.45A; diG/dt=0.45A/us TVJ=25oC; VD=6V; RGK= TVJ=25 C; VD=1/2VDRM IG=0.45A; diG/dt=0.45A/us TVJ=TVJM; IT=150A; tp=200us; -di/dt=10A/us VR=100V; dv/dt=20V/us; VD=2/3VDRM TVJ=TVJM; IT, IF=50A; -di/dt=6A/us typ.
o
IT, IF=300A; TVJ=25 C For power-loss calculations only (TVJ=125oC)
o
o
TVJ=25 C TVJ=-40oC TVJ=25oC TVJ=-40oC VD=2/3VDRM
2.5 2.6 150 200 0.2 10 450 200 2 185 170 45 0.22 0.11 0.42 0.21 12.7 9.6 50
FEATURES
* International standard package * Copper base plate * Planar passivated chips * Isolation voltage 3600 V~
APPLICATIONS
* DC motor control * Softstart AC motor controller * Light, heat and temperature control
ADVANTAGES
* Space and weight savings * Simple mounting with two screws * Improved temperature and power cycling * Reduced protection circuits
STD/SDT116
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 1 Surge overload current ITSM, IFSM: Crest value, t: duration
Fig. 2 i2dt versus time (1-10 ms)
Fig. 2a Maximum forward current at case temperature
Fig. 3 Power dissipation versus on-state current and ambient temperature (per thyristor or diode)
Fig. 4 Gate trigger characteristics
3 x STD/SDT116
Fig. 5 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
Fig. 6 Gate trigger delay time
STD/SDT116
Thyristor-Diode Modules, Diode-Thyristor Modules
Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature
3 x STD/SDT116
Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) RthJC for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJC (K/W) 0.22 0.23 0.25 0.27 0.28
Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.0066 0.0678 0.1456 ti (s) 0.0019 0.0477 0.344
Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJK for various conduction angles d: d DC 180oC 120oC 60oC 30oC RthJK (K/W) 0.42 0.43 0.45 0.47 0.48
Constants for ZthJK calculation: i 1 2 3 4 Rthi (K/W) 0.0066 0.0678 0.1456 0.2 ti (s) 0.0019 0.0477 0.344 1.32

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